New Publication by CogniGron on controllably influencing resistive switching

CogniGron researchers Anouk Goossens and Tamalika Banerjee published their work titled "Tunability of voltage pulse mediated memristive functionality by varying doping concentration in SrTiO3"

The potential applications of memristive devices extend far beyond what can be realized using digital computing with utilization prospects in data encryption and in mobile communication. This necessitates widening the scope of memristive attributes to include the intrinsic variability of the resistive states between cycles for security applications. They demonstrate the ability to controllably influence resistive switching in Nb-doped SrTiO3-based interface memristors of different doping concentrations.

Full article: Appl. Phys. Lett. 122, 034101 (2023); https://doi.org/10.1063/5.0124135